1 C3D04065E rev. a, 08-2016 C3D04065Esilicon carbide schottky diode z -rec ? rectifier features ? 650-volt schottky rectiier ? optimized for pfc boost diode application ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeficient on v f beneits ? replace bipolar with unipolar rectiiers ? essentially no switching losses ? higher eficiency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies (smps) ? boost diodes in pfc or dc/dc stages ? free wheeling diodes in inverter stages ? ac/dc converters package to-252-2 part number package marking C3D04065E to-252-2 c3d04065 pin 1pin 2 case v rrm = 650 v i f ( t c =135?c) = 6 a q c = ? 10 nc maximum ratings (t c = 25 ?c unless otherwise speciied) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 650 v v rsm surge peak reverse voltage 650 v v dc dc blocking voltage 650 v i f continuous forward current 13.5 64 a t c =25?c t c =135?c t c =155?c fig. 3 i frm repetitive peak forward surge current 1712 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave i fsm non-repetitive peak forward surge current 2519 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave fig. 8 i f,max non-repetitive peak forward surge current 220160 a t c =25?c, t p = 10 s, pulse t c =110?c, t p = 10 s, pulse fig. 8 p tot power dissipation 52 22.5 w t c =25?c t c =110?c fig. 4 dv/dt diode dv/dt ruggedness 200 v/ns v r =0-650v i 2 dt i 2 t value 3.11.8 a 2 s t c =25?c, t p =10 ms t c =110?c, t p =10 ms t j , t stg operating junction and storage temperature -55 to +175 ?c downloaded from: http:///
2 C3D04065E rev. a, 08-2016 40 60 80 100 reverse leakage current, i rr (ua) t j = 175 c t j = 125 c t j = 75 c 0 20 0 200 400 600 800 1000 1200 reverse leakage current, i reverse voltage, v r (v) t j = -55 c t j = 25 c electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.41.7 1.72.4 v i f = 4 a t j =25c i f = 4 a t j =175c fig. 1 i r reverse current 6 12 30 120 a v r = 650 v t j =25c v r = 650 v t j =175c fig. 2 q c total capacitive charge 10 nc v r = 400 v, i f = 4 a d i /d t = 500 a/s t j = 25c fig. 5 c total capacitance 231 18.5 15 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz fig. 6 e c capacitance stored energy 1.4 j v r = 400 v fig. 7 note: this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit note r jc thermal resistance from junction to case 2.9 c/w fig. 9 typical performance figure 1. forward characteristics figure 2. reverse characteristics 4 6 8 10 12 foward current, i f (a) t j = -55 c t j = 25 c t j = 75 c t j = 175 c t j = 125 c 0 2 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 foward current, i foward voltage, v f (v) i f (a) v f (v) v r (v) i r ( m a) downloaded from: http:///
3 C3D04065E rev. a, 08-2016 20 25 30 35 40 45 50 i f (a) 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 5 10 15 25 50 75 100 125 150 175 t c (c) figure 3. current derating figure 4. power derating 20 30 40 50 60 p tot (w) 0 10 20 25 50 75 100 125 150 175 t c (c) typical performance 6 8 10 12 14 16 capacitive charge, q c (nc) conditions: t j = 25 c 0 2 4 0 100 200 300 400 500 600 700 capacitive charge, q reverse voltage, v r (v) 100 150 200 250 capacitance (pf) conditions: t j = 25 c f test = 1 mhz v test = 25 mv 0 50 0 1 10 100 1000 capacitance (pf) reverse voltage, v r (v) i f(peak) (a) t c ?c t c ?c p tot (w) c (pf) v r (v) q c (nc) v r (v) figure 5. total capacitance charge vs. reverse voltage figure 6. capacitance vs. reverse voltage downloaded from: http:///
4 C3D04065E rev. a, 08-2016 1.5 2 2.5 3 3.5 4 capacitance stored energy, e c ( ? j) 0 0.5 1 0 100 200 300 400 500 600 700 capacitance stored energy, e reverse voltage, v r (v) typical performance 100 1,000 i fsm (a) t j_initial = 25 c t j_initial = 110 c 10 10e-6 100e-6 1e-3 10e-3 time, t p (s) figure 7. capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) v r (v) e c ( m j) figure 9. transient thermal impedance 100e-3 1 thermal resistance ( o c/w) 0.5 0.3 0.1 0.05 10e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 time, t p (s) 0.02 0.01 singlepulse thermal resistance (?c/w) t (sec) downloaded from: http:///
5 C3D04065E rev. a, 08-2016 recommended solder pad layout part number package marking C3D04065E to-252-2 c3d04065 to-252-2 note: recommended soldering proiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering symbol millimeters min max a 2.159 2.413 a1 0 0.13 b 0.64 0.89 b2 0.653 1.143 b3 5.004 5.6 c 0.457 0.61 c2 0.457 0.864 d 5.867 6.248 d1 5.21 - e 6.35 7.341 e1 4.32 - e 4.58 bsc h 9.65 10.414 l 1.106 1.78 l2 0.51 bsc l3 0.889 1.27 l4 0.64 1.01 0 8 tjb june 2015 mx+di+psi package to-252-2 package dimensions downloaded from: http:///
6 6 C3D04065E rev. a, 08-2016 copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your wolfpseed representative or from the product ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi- cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac deibrillators or similar emergency medical equipment, aircraft navigation or communication o r control systems, or air trafic control systems. notes ? cree sic schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes ? schottky diode spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 ? sic mosfet and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i related links diode model v t r t note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c vf t = v t + if * r t v t = 1.00 + (t j * -1.1*10 -3 ) r t = 0.069 + (t j * 8.3*10 -4 ) downloaded from: http:///
|
